close X

SpeakerDavid J. Perello

David received his Ph.D. from the University of Pittsburgh in Electrical Engineering in 2013. Since then, he has been a post-doctoral research fellow at the Center for Integrated Nanostructure Physics at Sungkyunkwan University. His current research interests are in understanding carrier transport in materials and systems confined to two dimensions. This includes ultrathin transition metal dichalcogenides such as MoS2 and MoTe2, as well as mono-elemental compounds such as bilayer graphene and black phosphorus. David is also interested in low temperature transport physics in these 2D materials, semiconductor device modelling, and nanofabrication. In one recent work, he demonstrated a doping-free method of type control in black phosphorus transistors by engineering the source/drain Schottky barriers. By using low work function aluminum as a contact, unipolar n-type black phosphorus transistors were demonstrated which show performance similar to silicon. David’s other recent work has focused on the characterization of electrical transport across domain boundaries in MoS2, where an unexpected mobility dependence on the merging-angle of the flakes was observed. abstract